| PART |
Description |
Maker |
| 15GN03CA-TB-E ENA1106A |
RF Transistor 10V, 70mA, fT=1.5GHz, NPN Single CP
|
ON Semiconductor
|
| ENA1108A |
RF Transistor 10V, 70mA, fT=1.5GHz, NPN Single MCP
|
ON Semiconductor
|
| 55GN01FA ENA1113A |
RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single SSFP
|
ON Semiconductor
|
| 55GN01CA 55GN01CA12 ENA1111A |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single CP
UHF Wide-band Low-noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 2SC5231A-8-TL-E 2SC5231A-9-TL-E |
RF Transistor 10V, 70mA, fT=7GHz, NPN Single SMCP
|
ON Semiconductor
|
| SB007W03Q |
30V/ 70mA Rectifier
30V, 70mA Rectifier
Silicon Diode
|
SANYO[Sanyo Semicon Device]
N/A
|
| IRG4BC10S IRG4BC10SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极晶体管IGBT的标准速度VCES和\u003d 600V电压的Vce（on）typ.1.10V @和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
|
| 2SC5245-5 2SC5245-3 2SC5245 |
NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier, OSC Applications
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | SC-70 晶体管|晶体管|叩| 10V的五（巴西）总裁| 30mA的一（c）|SC - 70
|
SANYO
|
| REF01CJ REF01CS REF01AJ REF01AZ REF01HJ REF01HP RE |
10V Precision Viltage Reference
10V Precision Voltage Reference
DL CENTER MTG POL POST 4 POST
10V Precision Viltage Reference 10V的精密Viltage参
10V Precision Viltage Reference 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, MBCY8
10 V Precision Voltage Reference
|
AD[Analog Devices]
Analog Devices, Inc.
|
| DTA125TA DTA143XLA DTA143XAA DTA144GFA DTB114GF DT |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | 50V V(BR)CEO | 70MA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 20MA I(C) | SC-71
晶体管| 50V五（巴西）总裁| 100mA的一c）|园区
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 500mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|资深大律师，71VAR
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 30mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 30mA的一c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 100mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 50MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 50mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 晶体管| 50V五（巴西）总裁| 100mA的一（c）| SOT - 23封装
|
Air Cost Control
Delta Electronics, Inc.
Yageo, Corp.
Rohm Co., Ltd.
Electronic Theatre Controls, Inc.
Intel, Corp.
Diodes, Inc.
|
| KO3404 |
VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON) 28 m (VGS = 10V)
|
TY Semiconductor Co., Ltd
|
| NDHV310AFBE2 |
30mW; 5V; 70mA blue laser diode
|
NICHIA CORPORATION
|
